Effect of Li Ion Irradiation on Reliability of AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor
نویسندگان
چکیده
AlGaAs/InGaAs/GaAs pHEMT (pseudomorphic high electron mobility transistors) materials and devices have been studied with 20MeV Li ions irradiation at two different fluences. The structural and electrical characteristics have been studied and compared before and after the irradiation. It has been found that with the irradiation FWHM of the material not changes as confirmed with x-ray rocking curve measurement while a positive shift in the pHEMT threshold voltage was found with C-V measurement. Keywords—AlGaAs/InGaAs/GaAs, pHEMT, heterostructure, irradiation, reliability.
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